In this work, the equations that describe the potentiodynamic behavior and chemical dissolution of oxide films growing by a high-field ionic migration mechanism are developed. The expressions for the dissolution current as well as the relation with the steady-state current and the scan rate are obtained. The procedure employed for obtaining the parameters characterizing the high-field growth and the dissolution current is discussed. Application to the oxide films formation on different metals is shown and the experimental results are compared with simulations obtained from the model.